1.3 /spl mu/m InGaP/InAsP MQW lasers with large spot-size and low loss fibre chip coupling fabricated by a standard buried heterostructure process

摘要

1.3 /spl mu/m large spot-size laser diodes without a mode converter fabricated by conventional buried heterostructure laser process, and using MQW core structure with low effective refractive index are demonstrated. The devices show low coupling losses to cleaved fibre, good alignment tolerances, and high temperature characteristics.