首页> 外国专利> ON-CHIP COUPLING CAPACITOR WITH PATTERNED RADIO FREQUENCY SHIELDING STRUCTURE FOR LOWER LOSS

ON-CHIP COUPLING CAPACITOR WITH PATTERNED RADIO FREQUENCY SHIELDING STRUCTURE FOR LOWER LOSS

机译:具有片状射频屏蔽结构的片上耦合电容器,可降低损耗

摘要

A capacitor radio frequency (RF) shielding structure may include a ground plane partially surrounding a coupling capacitor in an RF signal path. The ground plane may include a first ground plane portion extending between a positive terminal of the RF signal path and a negative terminal of the RF signal path. The ground plane may include a second ground plane portion extending between the positive terminal and the negative terminal of the RF signal path. The second ground plane portion may be opposed the first ground plane portion. The capacitor RF shielding structure may also include a patterned shielding layer electrically contacting the first ground plane portion and/or the second ground plane portion. The patterned shielding layer may electrically disconnecting a return current path over the patterned shielding layer to confine a return current to flowing over the first ground plane portion or the second ground plane portion.
机译:电容器射频(RF)屏蔽结构可以包括接地平面,该接地平面部分地围绕RF信号路径中的耦合电容器。接地平面可以包括在RF信号路径的正端子与RF信号路径的负端子之间延伸的第一接地平面部分。接地平面可以包括在RF信号路径的正端子和负端子之间延伸的第二接地平面部分。第二接地平面部分可以与第一接地平面部分相对。电容器RF屏蔽结构还可以包括与第一接地平面部分和/或第二接地平面部分电接触的图案化屏蔽层。图案化的屏蔽层可以电断开图案化的屏蔽层上方的返回电流路径,以将返回电流限制为流过第一接地平面部分或第二接地平面部分。

著录项

  • 公开/公告号SG11201910393QA

    专利类型

  • 公开/公告日2020-01-30

    原文格式PDF

  • 申请/专利权人 QUALCOMM INCORPORATED;

    申请/专利号SG20191110393Q

  • 发明设计人 CHENG HAITAO;JIN ZHANG;

    申请日2018-06-13

  • 分类号H01L23/522;

  • 国家 SG

  • 入库时间 2022-08-21 11:15:49

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