METHOD FOR ESTABLISHING SUB-CIRCUIT MODEL THAT SIMULATES MOSFET ELECTRICAL PROPERTIES AT DIFFERENT TEMPERATURES

摘要

Disclosed is a method for establishing a sub-circuit model that simulates MOSFET electrical properties at different temperatures, comprising the following steps: separately performing electrical property testing on a MOSFET at room temperature, a first temperature, and a second temperature, and recording the actual electrical property graphs, wherein the first temperature is at or below -40 degrees, and the second temperature is at or above 125 degrees; extracting a BSIM model according to the electrical property testing result at room temperature; defining, according to the BSIM model, the equivalent thermal resistance and temperature compensation factor to obtain a preliminary sub-circuit model; adjusting, according to the electrical property testing results at room temperature, the first temperature, and the second temperature, the values of the equivalent thermal resistance and the temperature compensation factor, so that the final sub-circuit model simulates an electrical property graph that precisely fit the actual electrical property graph.