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HESSIAN FREE CALCULATION OF PRODUCT OF HESSIAN MATRIX AND VECTOR FOR LITHOGRAPHY OPTIMIZATION
HESSIAN FREE CALCULATION OF PRODUCT OF HESSIAN MATRIX AND VECTOR FOR LITHOGRAPHY OPTIMIZATION
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机译:用于光刻优化的黑森矩阵和矢量的黑森计算
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摘要
A method for optimizing a binary mask pattern includes determining, by a processor, an evaluation value based on a comparison between a design pattern and a substrate pattern simulated based on the binary mask pattern. The method also includes, based on the evaluation value, using, by the processor, a gradient-based optimization method to generate a first adjusted binary mask pattern. The method also includes determining, by the processor, a first updated evaluation value based on a comparison between the design pattern and a first updated substrate pattern simulated based on the first adjusted binary mask pattern. The method also includes, based on the first updated evaluation value, using, by the processor, a product of a Hessian matrix and an arbitrary vector to generate a second adjusted binary mask pattern. The method also includes simulating, by the processor, a second updated substrate pattern based on the second adjusted binary mask pattern.
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