首页> 外国专利> PRODUCTION METHOD FOR CHIP MADE OF THERMOELECTRIC CONVERSION MATERIAL AND METHOD FOR MANUFACTURING THERMOELECTRIC CONVERSION MODULE USING CHIP OBTAINED BY SAID PRODUCTION METHOD

PRODUCTION METHOD FOR CHIP MADE OF THERMOELECTRIC CONVERSION MATERIAL AND METHOD FOR MANUFACTURING THERMOELECTRIC CONVERSION MODULE USING CHIP OBTAINED BY SAID PRODUCTION METHOD

机译:热电转换材料芯片的生产方法以及利用所述生产方法获得的芯片制造热电转换模块的方法

摘要

Provided are: a method for producing a chip made of a thermoelectric conversion material, wherein thermoelectric conversion material can be annealed in a form not having a junction with an electrode, and the thermoelectric conversion material can be annealed at the optimal annealing temperature; and a method for manufacturing a thermoelectric conversion module using the chip (13). Also provided are a production method for a chip made of a thermoelectric conversion material, and a method for manufacturing a thermoelectric conversion module using a chip obtained by said production method, the production method comprising: a step (A) for forming a sacrificial layer (2) on a substrate (1); a step (B) for forming a chip, made of the thermoelectric conversion material, on the sacrificial layer (2) obtained from the step (A); a step (C) for annealing the chip, made of the thermoelectric conversion material, obtained from the step (B); and a step (D) for peeling off the annealed chip, made of the thermoelectric conversion material, obtained from the step (C).
机译:本发明提供一种由热电转换材料制成的芯片的制造方法,其中,可以将热电转换材料以不与电极接合的形式进行退火,并且可以在最佳的退火温度下对热电转换材料进行退火。以及使用芯片(13)制造热电转换模块的方法。还提供了一种由热电转换材料制成的芯片的制造方法,以及使用通过所述制造方法获得的芯片制造热电转换模块的方法,该制造方法包括:形成牺牲层的步骤(A)( 2)在基板(1)上;步骤(B),用于在由步骤(A)获得的牺牲层(2)上形成由热电转换材料制成的芯片;步骤(C),用于使由步骤(B)获得的由热电转换材料制成的芯片退火;步骤(D),用于剥离从步骤(C)获得的由热电转换材料制成的退火芯片。

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