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PROCESSING DEVICE EMPLOYING PLASMA, AND PROCESSING METHOD FOR PERFORMING PROCESS TO IRRADIATE PROCESSING TARGET WITH PLASMA

机译:等离子体加工装置及等离子体辐射加工目标的加工方法

摘要

In order to provide a processing device and a processing method employing plasma with which stability of maintaining a plasma lighting state is improved, while microwaves having a pulsed microwave power are used as the microwaves for generating the plasma, a processing device (10) employing plasma (25), according to the present invention, is provided with a processing chamber (14) for performing a process to irradiate a processing target (13) with the plasma (25), and a microwave supply unit (17) which supplies microwaves for generating the plasma (25) into the processing chamber (14), wherein the microwave supply unit (17) supplies first microwaves having a pulsed first microwave power in which a difference between a maximum value and a minimum value of the microwave power is at least equal to a first amplitude, and second microwaves having a steady second microwave power with little variation in the microwave power.
机译:为了提供一种使用等离子体的处理装置和处理方法,该等离子体处理装置和处理方法提高了维持等离子体点亮状态的稳定性,同时将具有脉冲微波功率的微波用作产生等离子体的微波,使用等离子体的处理装置(10) (25)根据本发明,设置有处理室(14),该处理室(14)用于进行向等离子体(25)照射被处理物(13)的处理;以及微波供给部(17),该微波供给部(17)供给用于产生等离子体(25)到处理室(14)中,其中微波供应单元(17)供应具有脉冲第一微波功率的第一微波,其中微波功率的最大值和最小值之间的差至少为等于第一振幅,第二微波具有稳定的第二微波功率,微波功率几乎没有变化。

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