首页>
外国专利>
INTEGRATION OF MATERIALS REMOVAL AND SURFACE TREATMENT IN SEMICONDUCTOR DEVICE FABRICATION
INTEGRATION OF MATERIALS REMOVAL AND SURFACE TREATMENT IN SEMICONDUCTOR DEVICE FABRICATION
展开▼
机译:半导体器件制造中材料去除和表面处理的集成
展开▼
页面导航
摘要
著录项
相似文献
摘要
Processes for surface treatment of a workpiece are provided. In one example implementation, organic radicals (e.g., methyl CH3 radicals) can be generated by exciting and/or dissociating hydrogen and/or inert gas (e.g., Ar, He, etc) molecules in a remote plasma source and a subsequent reaction with organic molecule (alkanes and alkenes). The organic radicals (e.g., methyl CH3 radicals) can be exposed to the silicon and/or silicon germanium surfaces. After exposure to the organic radicals, the silicon and/or silicon germanium surfaces can be stable in air for a time period (e.g., days) with reduced surface oxidation such that the silicon and/or silicon germanium surfaces can be effectively protected from oxidation. As such, native surface oxide removal process before subsequent process steps can be eliminated.
展开▼