This semiconductor device joining member 10 is used to join a to-be-joined surface of a semiconductor device 11 and a to-be-joined surface of a substrate 12 on which said semiconductor device 11 is to be placed, includes a layer comprising an alloy 102 that contains, as main components, Sn and at least one selected from among Ag, Cu, and Au, and has a melting point of at least 500°C. The inside of said joining member has a plurality of voids 101, the volume of which accounts for 5-40% of the total volume of the joining member. The joining member is configured to have a thermal conductivity of at least 120 W/m·K and an electrical conductivity of at least 50% IACS after having undergone a heat cycle test in which a cycle of cooling to -40°C and heating to 300°C is repeated 300 times.
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