CIRCUIT FOR TESTING DYNAMIC RESISTANCE OF GALLIUM NITRIDE DEVICE

摘要

A circuit for testing dynamic resistance of a gallium nitride device Q1, comprising a gate drive module (3) for driving a device to be tested, a clamp circuit (1), and a load module (2). One end of the load module (2) is connected to a power supply DC. The clamp circuit (1) comprises a voltage stabilizing module (12) and a high-voltage diode D1. An anode of the high-voltage diode D1 is connected to one end of the voltage stabilizing module (12). A cathode of the high-voltage diode D1 and the other end of the load module (2) are connected to a drain electrode of a gallium nitride device Q1 to be tested. The other end of the voltage stabilizing module (12) is connected to the power ground and is used for connecting to a source electrode of said gallium nitride device Q1. The clamp circuit (1) further comprises a constant current module (11). A constant current output by the constant current module (11) flows to said gallium nitride device Q1 by means of the high-voltage diode D1. A gate control signal of said gallium nitride device Q1 is provided by the gate drive module (3). When said gallium nitride device Q1 is turned on, a current flowing through the high-voltage diode D1 is provided by the constant current module (11). When said gallium nitride device Q1 is turned off, a voltage tested at a voltage test point is stabilized by the voltage stabilizing module (12).