REDUCTION OF BR2 AND CL2 IN SEMICONDUCTOR PROCESSES

摘要

One or more embodiments described herein relate to abatement systems for reducing Bra and CI₂ in semiconductor processes. In embodiments described herein, semiconductor etch processes are performed within process chambers. Thereafter, fluorinated greenhouse gases (F-GHGs), HBr, and CI₂ gases exit the process chamber and enter a plasma reactor. Reagent gases are delivered from a reagent gas delivery apparatus to the plasma reactor to mix with the process gases. Radio frequency (RF) power is applied to the plasma reactor, which adds energy and "excites" the gases within the process chamber. When HBr is energized, it forms Br₂. Βr₂ and CI₂ are corrosive and toxic. However, the addition of H₂O in the plasma reactor quenches the Br₂ and CI₂ emissions, as the H atoms recombine with the Br atoms and the Cl atoms to form HBr and HCI. HBr and HCI are readily water-soluble and removed through a wet scrubber.