首页> 外国专利> LIGHT-EMITTING DIODE COMPRISING PEROVSKITE LIGHT-EMITTING LAYER HAVING LAYERED STRUCTURE, AND METHOD OF PRODUCING SAME

LIGHT-EMITTING DIODE COMPRISING PEROVSKITE LIGHT-EMITTING LAYER HAVING LAYERED STRUCTURE, AND METHOD OF PRODUCING SAME

机译:具有层状结构的钙钛矿发光层的发光二极管及其制造方法

摘要

The present invention relates to a light-emitting diode comprising a light-emitting layer, wherein the light-emitting layer has a layered structure with two or more layers of a first light-emitting material layer and a second light-emitting material layer alternatingly disposed, wherein each of the light-emitting material layers is a perovskite layer or an organic material layer, and the first light-emitting material layer and the second light-emitting material layer have different band gaps relative to each other. As the light-emitting layer has a layered structure in which the first light-emitting material layer and the second light-emitting material layer are alternatingly disposed, electroluminescence efficiency can be improved by adjusting the electron-hole recombination region through controlling energy levels. In addition, a white light-emitting diode can be produced by controlling energy levels of the first light-emitting material layer and the second light-emitting material layer.
机译:发光二极管技术领域本发明涉及一种具有发光层的发光二极管,其中,所述发光层具有将两层以上的第一发光材料层和第二发光材料层交替设置的层状结构。其中,每个发光材料层是钙钛矿层或有机材料层,并且第一发光材料层和第二发光材料层相对于彼此具有不同的带隙。由于发光层具有其中第一发光材料层和第二发光材料层交替布置的层状结构,因此可以通过控制能量水平来调节电子-空穴复合区域来提高电致发光效率。另外,可以通过控制第一发光材料层和第二发光材料层的能级来产生白色发光二极管。

著录项

  • 公开/公告号WO2020184825A1

    专利类型

  • 公开/公告日2020-09-17

    原文格式PDF

  • 申请/专利权人 SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION;

    申请/专利号WO2019KR18760

  • 发明设计人 LEE TAE-WOO;KIM YOUNG-HOON;

    申请日2019-12-31

  • 分类号H01L51/50;H01L33/08;H01L33/26;

  • 国家 WO

  • 入库时间 2022-08-21 11:09:25

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