RF High Isolation RF Switch Robust to Parasitic Wire-Bonding Inductor Effect

摘要

The present invention relates to an RF switch having a high isolation property with a wire bonding parasite inductor effect, capable of considerably improving the isolation property of an existing RF switch in a high-frequency band through a wire bonding parasite inductor effect in regard to the formation of an RF switch having a high power driving ability, a low insertion loss and a high isolation property. In order to form a switch element having high linearity and stably receiving a high-output signal, in regard to a high-output switch element structure in which a plurality of transistors are stacked in series, an additional switch element (S3) heading for an earth while having a structure with a plurality of transistors stacked in series is connected to a serial switch element (S1) so that an isolation property is improved, while the additional switch element (S3) is turned off if the serial switch element (S1) is turned on, and the additional switch element (S3) is turned on if the serial switch element (S1) is turned off. Therefore, when the serial switch element (S1) is turned off, a leak signal flowing from an input terminal into an output terminal is blocked by the additional switch element (S3) in an earthing direction, so the isolation property can be improved.