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Negative actinic ray-sensitive or radiation-sensitive resin composition, negative actinic ray-sensitive or radiation-sensitive film, pattern formation method, and manufacturing method of electronic device

机译:负性光化射线或放射线敏感性树脂组合物,负性光化射线或放射线敏感性膜,图案形成方法以及电子设备的制造方法

摘要

In particular, in the formation of an ultrafine pattern (for example, a line width of 50 nm or less), a negative actinic ray capable of forming a pattern excellent in sensitivity, resolution, PED stability, and line edge roughness (LER) performance The mask blank which has a sex or radiation sensitive resin composition and a negative actinic-ray-sensitive or radiation-sensitive film using it, a negative actinic-ray-sensitive or radiation-sensitive film, the pattern formation method, and the electron containing the said pattern formation method Provided is a method of manufacturing a device. Mask blank is, (A) to by a polymer having a repeating unit represented by the general formula (1) compound and, (B) irradiation of actinic ray or radiation, and the volume is 130Å 3 above comprising a compound capable of generating an 2000Å 3 or less acid And a negative actinic ray-sensitive or radiation-sensitive resin composition, and a negative actinic ray-sensitive or radiation-sensitive film and a negative actinic ray-sensitive or radiation-sensitive film using the same. In the formula, R 1 represents a hydrogen atom, an alkyl group, or a halogen atom, R 2 and R 3 each independently represent a hydrogen atom, an alkyl group, a cycloalkyl group, an aralkyl group, or an aryl group, and R 4 represents a hydrogen atom , An alkyl group, a cycloalkyl group, an aryl group, or an acyl group, L represents a single bond or a divalent linking group, Ar represents an aromatic group, and m and n each independently represent an integer of 1 or more.
机译:特别地,在形成超细图案(例如,线宽为50nm或更小)时,能够形成灵敏度,分辨率,PED稳定性和线边缘粗糙度(LER)性能优异的图案的负光化射线。具有性或放射线敏感性树脂组合物的掩模坯料,以及使用其的负性光化射线敏感性或放射线敏感性膜,负性光化射线敏感性或放射线敏感性膜,图案形成方法以及含电子体所述图案形成方法是提供一种器件的制造方法。掩模坯料为(A)〜具有通式(1)表示的重复单元的聚合物,(B)光化射线或放射线的照射,其体积为130Å 3 包含能够产生小于或等于2000Å 3 的酸的化合物和负性光化射线敏感或辐射敏感的树脂组合物,以及负性光化射线敏感或辐射敏感的膜和负性光化射线敏感或辐射敏感胶片使用相同的胶片。式中,R 1 表示氢原子,烷基或卤素原子,R 2 和R 3 分别独立地表示氢原子,烷基,环烷基,芳烷基或芳基,R 4 表示氢原子,烷基,环烷基,芳基或酰基L为单键或二价连接基团,Ar为芳香族基团,m和n分别独立地为1以上的整数。

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