Heat-Sink Substrate For High-Power Semiconductor High-Power Semiconductor Module Comprising The Same And Manufacturing Process Thereof

摘要

Disclosed are a radiation substrate for a high-power semiconductor, a high-power semiconductor module including the same and a manufacturing method thereof. According to the present invention, the radiation substrate for a high-power semiconductor includes: an electrode metal layer including an electrode pattern in which a high-power semiconductor element is embedded through an insulation groove; a metal base forming a radiator spreading and radiating heat emitted from the high-power semiconductor element through thermal conduction; and an insulation layer having an electric insulation property, and placed between the electrode metal layer and the metal base. The insulation groove includes a part cut vertically from the surface of the electrode metal layer. According to the present invention, since a cross-sectional profile which is almost vertical in a stepped part is formed by cutting at least one part of the insulation groove from which the electrode metal electrode has been removed, excellent insulation performance can be provided. According to the present invention, the manufacturing method can include a cutting step of cutting an insulation groove pattern and an etching groove of etching a remaining part of the insulation groove pattern.