n n COATING LIQUID FOR FORMING N-TYPE OXIDE SEMICONDUCTOR FILM METHOD FOR PRODUCING N-TYPE OXIDE SEMICONDUCTOR FILM AND METHOD FOR PRODUCING FIELD-EFFECT TRANSISTOR

摘要

The present invention provides a coating liquid for forming an n-type oxide semiconductor film, the group A element being at least one selected from the group consisting of Sc, Y, Ln, B, Al, and Ga; A group B element which is at least one of In and Tl; Group C element which is at least one selected from the group consisting of Group 4 element, Group 5 element, Group 6 element, Group 7 element, Group 8 element, Group 9 element, Group 10 element, Group 14 element, Group 15 element and Group 16 element ; And it provides the coating liquid for n-type oxide semiconductor film formation containing a solvent.