- IN-SITU REAL-TIME PLASMA CHAMBER CONDITION MONITORING

摘要

Provided are methods for in-situ and real-time chamber condition monitoring. For example, in one embodiment of the present invention, for each wafer in a chamber, a frequency and a wavelength of free radicals in the chamber is monitored in-situ. The frequency and wavelength of the free radicals are associated with at least one selected chemical. The associated free radicals are compared to an index. The index includes a target range for each chemical in the at least one selected chemical.