Self-selection memory device access technology

摘要

Methods, systems and devices related to self-selecting memory device access technologies are described. A self-selecting memory cell can store one or more bits of data represented by different threshold voltages of the self-selecting memory cell. The programming pulse can be modified to establish the different threshold voltages by modifying one or more durations at which a fixed voltage level or current level is maintained across the self-selecting memory cell. The self-selecting memory cell can include a chalcogenide alloy. The non-uniform distribution of urea in the chalcogenide alloy can determine a particular threshold voltage of the self-selecting memory cell. The shape of the programming pulse can be configured to modify the distribution of the element in the chalcogenide alloy based on the desired logic state of the self-selecting memory cell.