The structure and its fabrication process for the capacitive type pressure sensor with through hole via

摘要

An electrostatic pressure sensor according to an embodiment of the present invention includes a first wafer having a first electrode formed therein and a through portion provided to form a pupil when the first wafer is coupled to the first wafer, and the thin film shielding one surface of the through portion, the thin film. It includes a second wafer including a second electrode provided on one side of the.