首页> 外国专利> Capacitive pressure sensor manufacturing method involves attaching etching mask over diamond shaped pressure sensor structures, such that ends of slots in etching mask coincides with corners of pressure sensor structure

Capacitive pressure sensor manufacturing method involves attaching etching mask over diamond shaped pressure sensor structures, such that ends of slots in etching mask coincides with corners of pressure sensor structure

机译:电容式压力传感器的制造方法涉及在菱形压力传感器结构上附着蚀刻掩模,使得蚀刻掩模中的槽的末端与压力传感器结构的拐角重合。

摘要

A etching mask (18) is provided with slots (19) oriented in direction (110). The etching mask is attached over a diamond shaped pressure sensor structures to be etched on silicon wafer oriented along the specific direction (100), such that the ends of slots in the etching mask coincides with the corners of the pressure sensor structure. An independent claim is also included for capacitive pressure sensor.
机译:蚀刻掩模(18)设置有沿方向(110)定向的狭槽(19)。蚀刻掩模附着在菱形压力传感器结构上,以在沿着特定方向(100)定向的硅晶片上蚀刻,使得蚀刻掩模中的狭缝的端部与压力传感器结构的角重合。电容式压力传感器也包含独立索赔。

著录项

  • 公开/公告号FI115487B

    专利类型

  • 公开/公告日2005-05-13

    原文格式PDF

  • 申请/专利权人 VTI TECHNOLOGIES OY;

    申请/专利号FI20040000629

  • 发明设计人 RUOHIOJAAKKO;AASTROEMRIIKKA;

    申请日2004-05-03

  • 分类号G01L9/12;

  • 国家 FI

  • 入库时间 2022-08-21 22:18:02

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