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Method for determining and adjusting the diameter of a single crystal during the pulling of the single crystal

机译:在单晶拉制过程中确定和调整单晶直径的方法

摘要

The present invention raises the cylindrical section 205 of the single crystal 200 and the longitudinal cone 210 of the single crystal 200 from the melt 230 in the crucible 130 of the device 100 for pulling the single crystal 200. the surface of the single crystal as a method for determining the diameter (d K) of 200, the melt 230, the diameter of the single crystal (200) at the interface with the (d K) is the melt 230 for the crucible 130 ( 235) is determined in consideration of the first descending speed (v S ), the first rising speed (v K ) in which the single crystal 200 is lifted relative to the crucible 130, and the preservation of mass, and The diameter of the single crystal 200 determined during the pulling of the cylindrical section 205 of the single crystal 200 by observing the bright ring on the surface 235 is a correction of the diameter d K of the single crystal 200 to be determined during the pulling of the single crystal, It relates to a method that is used for validation or comparison.
机译:本发明从用于拉动单晶200的装置100的坩埚130中的熔体230中产生了单晶200的圆柱部分205和单晶200的纵向锥体210。确定直径200(d K)的方法,熔体230,与(d K)的界面处的单晶(200)的直径是考虑到单晶的第一下降速度(v S ),第一上升速度(v K )确定坩埚130(235)的熔体230相对于坩埚130提升200,并保持质量,并且通过观察表面235上的亮环,在拉动单晶200的圆柱部205期间确定的单晶200的直径是对单晶拉制过程中要确定的单晶200的直径d K stal,它涉及一种用于验证或比较的方法。

著录项

  • 公开/公告号KR102111873B1

    专利类型

  • 公开/公告日2020-05-18

    原文格式PDF

  • 申请/专利权人 실트로닉 아게;

    申请/专利号KR20187022122

  • 申请日2017-01-24

  • 分类号C30B15/20;C30B15/30;C30B29/06;

  • 国家 KR

  • 入库时间 2022-08-21 11:04:39

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