首页> 外国专利> METHOD FOR MANUFACTURING SUBSTRATE FOR MASK BLANK METHOD FOR MANUFACTURING MASK BLANK METHOD FOR MANUFACTURING TRANSFER MASK METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND INSPECTING APPARATUS

METHOD FOR MANUFACTURING SUBSTRATE FOR MASK BLANK METHOD FOR MANUFACTURING MASK BLANK METHOD FOR MANUFACTURING TRANSFER MASK METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND INSPECTING APPARATUS

机译:制造掩膜基料的方法制造掩膜基料的方法制造转移器件的掩膜法的方法制造半导体装置和检查仪器的方法

摘要

An object of the present invention is to properly inspect the presence or absence of defects in a translucent substrate in a method for manufacturing a mask blank substrate. It is a method of manufacturing a substrate for a mask blank, and the inspection position 302 of the inspection surface of the other main surface through the optical member 102 optically connected via one main surface of the transparent substrate 10 and a liquid is interposed. It has an inspection process for irradiating in the direction of total reflection from, and detecting the presence or absence of inspection light leaking from a position other than the planned exit position of the optical member 102, the inspection process being the first direction in which the inspection light is totally reflected at inspection position 302 Irradiated in the direction, the inspection light totally reflected at the inspection position 302 is introduced into the optical member 102, and the direction of the introduced inspection light is a direction different from the first direction, and the direction totally reflected at the inspection position 302 The inspection light is also irradiated to the inspection position 302 in the second direction by reflecting in the optical member 102 so as to be the phosphorus second direction.
机译:本发明的目的是在制造掩模坯料基板的方法中适当地检查半透明基板中是否存在缺陷。这是一种制造用于掩模坯料的基板的方法,并且通过经由透明基板10的一个主表面与液体光学连接的光学构件102插入另一个主表面的检查表面的检查位置302。其具有用于从光学构件102的计划出射位置以外的位置向全反射方向照射并检测有无检查光泄漏的检查工序,该检查工序为第一方向。检查光在沿该方向照射的检查位置302处被全反射,在检查位置302被全反射的检查光被引入光学构件102,并且被引入的检查光的方向是与第一方向不同的方向,并且在检查位置302上全反射的方向。通过在光学部件102中反射而使磷沿第二方向在第二方向上照射到检查位置302。

著录项

  • 公开/公告号KR102112362B1

    专利类型

  • 公开/公告日2020-05-18

    原文格式PDF

  • 申请/专利权人 호야 가부시키가이샤;

    申请/专利号KR20130091526

  • 发明设计人 다나베 마사루;

    申请日2013-08-01

  • 分类号H01L21/027;H01L21/66;

  • 国家 KR

  • 入库时间 2022-08-21 11:04:39

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