A method of forming a pattern on an underlying layer of an object to be treated is provided. This method comprises the steps of (a) forming a self-organizing block copolymer layer comprising a first polymer and a second polymer on a base layer, and (b) comprising a first polymer in a block copolymer layer. The film thickness of the second region in the capacitively coupled plasma processing apparatus after the step of treating the object to be formed to form the second region including the first region and the second polymer, and (c) the step of treating the object. After the process of etching the second region to the middle of (d) and the process of etching the second region, a negative direct current voltage is applied to the upper electrode of the plasma processing apparatus to generate secondary electrons from the upper electrode, and It includes the process of irradiating a secondary electron to a to-be-processed object, and (e) the process of irradiating a secondary electron to a to-be-processed object, and further etching a 2nd area in a plasma processing apparatus.
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