Logic Gate Based Magnetic Tunnel Junction Structure

摘要

In the magnetic tunnel junction structure based logic gate according to an embodiment of the present invention, a tunneling barrier layer and a free layer are sequentially stacked on a fixed layer, and a single magnetic tunnel junction receiving first and second magnetic fields and first and second voltages is applied. Structure, the first input element for applying the first magnetic field and the second magnetic field, and when a magnetic field is applied to the first input element, is divided based on induced voltages that induce a critical current required for reversing magnetization of the free layer And a second input element that applies a voltage selected from two of the first to third operating voltage regions as the first voltage and the second voltage, respectively, to an application combination of the first and second input elements. Depending on the magnetization state of the free layer with respect to the fixed layer can operate in 14 logic modes.