NONVOLATILE MEMORY DEVICE AND PROGRAM PROGRAMMING METHOD THEREOF

摘要

A method of programming a 3D nonvolatile memory device according to an embodiment of the present invention includes: programming selected memory cells among memory cells connected to a point where a plurality of strings and a selected word line intersect and a program pass of the selected memory cells The program loop including the step of verifying whether or not is executed a plurality of times, the level of the voltage applied to the common source line commonly connected to the plurality of strings in the program step may be variable. Therefore, it is possible to increase the boosting efficiency during program operation and at the same time reduce the power consumption required to charge-discharge the common source line.