FORMING LOW-STRESS SILICON NITRIDE LAYER THROUGH HYDROGEN TREATMENT

摘要

The method includes placing a wafer into a process chamber and depositing a silicon nitride layer on a base layer of the wafer. The process of depositing the silicon nitride layer includes: introducing a silicon-containing precursor into a process chamber, purging the silicon-containing precursor from the process chamber, introducing hydrogen radicals into the process chamber, purging hydrogen radicals from the process chamber; Introducing a nitrogen-containing precursor into the process chamber, and purging the nitrogen-containing precursor from the process chamber.