PHASE CHANGE RANDOM ACCESS MEMORY ELEMENT FOR IMPROVING RESISTANCE DRIFT AND DYNAMIC RESISTANCE DRIFT COMPENSATION METHOD OF THE SAME

摘要

Disclosed are a phase change memory device for improving resistance drift, and a method for compensating dynamic resistance drift of the phase change memory device. According to an embodiment, a phase change memory device includes: a plurality of bit lines; A plurality of source lines disposed to cross the plurality of bit lines; A plurality of memory cells configured to include respective phase change layers and disposed at intersections of the plurality of bit lines and the plurality of source lines; A current generator connected to the plurality of bit lines and generating a set current to be supplied to each of the plurality of memory cells; And a control driver that controls the current generator and the plurality of bit lines so that the set current is supplied to each of the plurality of memory cells.