Manufacturing method for silicon nanowire-based piezoresistive pressure sensor using micro holes

摘要

The present invention relates to a method of manufacturing a pressure sensor based on a silicon nanowire, and more specifically, by utilizing the fine pores of the oxide film on the upper surface of the silicon substrate, selective silicon nitride film deposition on the cavity region and the oxide film becomes possible. A method of manufacturing a pressure sensor capable of implementing a diaphragm and a cavity structure essential to a sensor structure is provided. A method of manufacturing a silicon nanowire-based pressure sensor according to an embodiment includes: a first step of forming a silicon nanowire and a sensor structure on a silicon substrate; A second step of forming an oxide film on the silicon substrate through a thermal oxidation process; A third step of patterning fine holes in the oxide film generated through the thermal oxidation process; A fourth step of forming a recessed region corresponding to the cavity of the silicon substrate under the oxide film through the fine hole; And a fifth step of forming a diaphragm by depositing a silicon nitride film on the oxide film including the fine holes and the silicon nanowires.