BOOTSTRAP METAL-OXIDE-SEMICONDUCTOR (MOS) DEVICE INTEGRATED WITH A HIGH VOLTAGE MOS (HVMOS) DEVICE AND A HIGH VOLTAGE JUNCTION TERMINATION (HVJT) DEVICE

摘要

Various embodiments of the present application relate to an integrated circuit (IC) in which a bootstrap metal oxide semiconductor (MOS) device is integrated with a high voltage metal oxide semiconductor (HVMOS) device and a high voltage junction finish (HVJT) device. In some embodiments, the drift well is within the semiconductor substrate. The drift well has a first doping type and has a ring-shaped top layout. The first switching device is on the drift well. A second switching device is in the recess in the sidewall of the drift well on the semiconductor substrate. The peripheral well is in the semiconductor substrate and has a second doping type opposite to the first doping type. The peripheral well surrounds the drift well, the first switching device, and the second switching device, and further separates the second switching device from the drift well and the first switching device.