Resistance change memory device with bi-directional rectification characteristics and fabrication method for the same

摘要

A resistance change memory device and a method of manufacturing the same are provided. The resistance change memory element includes a first electrode. A first copper oxide film having a plurality of crystal grains and showing bipolar diode switching is positioned on the first electrode. A second copper oxide film having a plurality of crystal grains on the first copper oxide film and showing bipolar resistive switching by formation or destruction of copper filaments within the grain boundary is disposed. A second electrode is positioned on the second copper oxide layer.