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METHOD OF DETERMINING RELATIVE DIELECTRIC PERMEABILITY AND ANGLE TANGENT OF DIELECTRIC LOSS OF DIELECTRIC STRUCTURE

机译:确定介电结构相对介电常数和介电损耗角的方法

摘要

FIELD: monitoring and measuring equipment.;SUBSTANCE: invention relates to control and measurement equipment and is intended for simultaneous determination of relative dielectric permeability and tangent of dielectric loss angle of dielectric structures in super-high frequency range, and can be used for nondestructive inspection of electrophysical parameters of produced dielectric substrates and structures for devices of microwave electronics. Invention is a method of determining relative dielectric permeability and tangent of dielectric loss angle of dielectric structures, involving arrangement of dielectric structure in the region of violation of periodicity of microwave photonic crystal, irradiation of a photonic crystal containing a measured dielectric structure, electromagnetic radiation of the microwave range, measurement of frequency dependences of transmission and reflection coefficients in the forbidden zone in the vicinity of the defect mode, calculation by means of computer of unknown values, at which theoretical frequency dependences of reflection and passage coefficients of electromagnetic radiation are closest to measured values, wherein, as the photonic crystal, a coaxial super-high-frequency photonic crystal is used, which is serially connected sections of the coaxial transmission line, space between outer and inner conductor of each section is completely filled with dielectric, wherein relative permittivity of dielectric filling varies periodically along direction of propagation of electromagnetic wave, selecting values of lengths and relative dielectric permittivities of dielectric fillings of alternating sections of the coaxial transmission line so as to provide a multiplicity of their electrical lengths, leading to formation of photonic forbidden zones of equal depth on frequency dependences of transmission coefficients of electromagnetic radiation, violation of the periodicity of the microwave photonic crystal is created in the central segment of the coaxial photonic crystal, which leads to formation of defect modes in several photonic forbidden zones, calculating distribution of electromagnetic wave field inside coaxial photonic crystal along direction of propagation of electromagnetic wave at frequencies corresponding to defective modes in photonic forbidden zones, fixing nodes and antinodes of standing electromagnetic wave inside coaxial photonic crystal, defective mode is selected, at frequency of which in the area of dielectric structure location in central section of coaxial photonic crystal there is antinode of standing wave.;EFFECT: technical result consists in expansion of functional capabilities of simultaneous determination of relative dielectric permeability and tangent of dielectric losses dielectric structures used as dielectric filling of super-high-frequency coaxial cables.;3 cl, 1 tbl, 11 dwg
机译:技术领域本发明涉及控制和测量设备,旨在同时测定超高频范围内介电结构的相对介电常数和介电损耗角正切,可用于无损检测。的介电基片和微波电子设备结构的电物理参数的确定。本发明是一种确定介电结构的相对介电常数和介电损耗角正切的方法,包括将介电结构布置在违反微波光子晶体周期性的区域中,辐照包含测得的介电结构的光子晶体,电磁辐射。微波范围,在缺陷模式附近的禁区中透射和反射系数的频率依赖性的测量,借助于未知值的计算机计算,在这种情况下,理论反射率和电磁辐射的通过系数的频率依赖性最接近测量值,其中,使用同轴超高频光子晶体作为光子晶体,该同轴超高频光子晶体是同轴传输线的串联部分,每个部分的内外导体之间的空间完全充满电介质,其中相对介电常数电介质填充的数量沿电磁波的传播方向周期性变化,选择同轴传输线交替部分的电介质填充物的长度值和相对介电常数,以提供多个电长度,从而导致形成光子禁区在电磁辐射的透射系数与频率有关的深度相等的情况下,在同轴光子晶体的中心部分会违反微波光子晶体的周期性,从而导致在多个光子禁区中形成缺陷模式,从而计算出同轴光子晶体内部的电磁波场沿着电磁波的传播方向以与光子禁区中的缺陷模式相对应的频率发生,选择同轴光子晶体中站立的电磁波的固定节点和波腹,选择缺陷模式;在频率上,在同轴光子晶体中心部分的介电结构位置区域存在驻波波腹。效果:技术成果在于同时确定相对介电常数和介电损耗正切的功能扩展用作超高频同轴电缆的绝缘填充物的结构。; 3 cl,1 tbl,11 dwg

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