METHOD OF USING PLATINUM METALLIZATION IN SYSTEM OF REDISTRIBUTION OF CONTACT PADS OF CRYSTALS OF INTEGRATED MICROCIRCUITS AND SEMICONDUCTOR DEVICES

摘要

FIELD: physics; electricity.;SUBSTANCE: invention relates to electronics and is intended for redistribution of contact areas of semiconductor crystals of integrated microcircuits, hybrid integrated circuits, micro-assemblies, modules, microelectromechanical systems and sensors on a semiconductor wafer by creating additional thin-film layers and platinum-based plating. Summary of invention is that method of redistribution of contact areas of crystal based on platinum metallisation of integrated circuits involves depositing on semiconductor plate with formed semiconductor structures of aluminum metal coating contact pads and passivation layer SiO₂ or Si₃N₄, additional repassiving layer of SiO₂ or Si₃N₄ with subsequent opening of windows for initial contact pads of crystals on semiconductor plate, applying on the entire surface of the plate of the conducting adhesive and barrier layers of titanium nitride TiN or together titanium and titanium nitride Ti/TiN, application on the adhesive layer of the main metallisation layer - platinum Pt to create topological thin-film structures of electrical communication lines for redistribution of contact areas in the matrix of contact pads over the entire surface area of the crystal, application of plating of adhesion and barrier layers of titanium nitride TiN or together titanium and titanium nitride Ti/TiN, application of upper protective layer, opening in it of windows under contact pads to surface of platinum metallisation, formation in opened windows of contact areas of solder ball leads on platinum metallization.;EFFECT: technical result is possibility of forming uniformly redistributed on planar side of contact pads on entire surface of semiconductor plate, which enables to create a free matrix of soldered joints, which is limited only by the geometric dimensions of the semiconductor crystal and the required number of electrical contacts for mounting by flip-chip method.;1 cl, 15 dwg