首页> 外国专利> DEVICE FOR PRODUCING POLARIZED LIGHT BASED ON ORIENTED ARRAY OF NANOPLATES GASE/GAAS

DEVICE FOR PRODUCING POLARIZED LIGHT BASED ON ORIENTED ARRAY OF NANOPLATES GASE/GAAS

机译:基于纳米平板Gase / GAAS定向阵列的偏光产生装置

摘要

FIELD: optoelectronics.;SUBSTANCE: device for producing polarized light with degree of linear polarization of light ~(50–60):1 includes source (1) of pulsed or permanent unpolarised light, in form of, for example, commercial LED based on III-nitrides of blue-green, blue or ultraviolet range (with emission wavelength in range of 380–550 nm), and external polarizing element (2), made in the form of substrate (3) of GaAs with orientation (001), on which there is a layer with thickness of ~150–250 nm, consisting of nanoplates (4) of two-dimensional GaSe crystal, oriented along selected directions 111 GaAs substrates. External polarizing element (2), in form of an array of oriented nanoplates (4) of GaSe, is spontaneously formed when growing a layer of GaSe by molecular beam epitaxy on substrate (3) of GaAs with orientation (001) in the epitaxial growth temperature range TS=500–520 °C.;EFFECT: device has small dimensions, mainly determined by dimensions of non-polarized light source, high efficiency of converting unpolarised radiation into polarized (up to 90 % by intensity) and high degree of linear polarization of light (50:1 and more).;6 cl, 4 dwg
机译:领域:用于产生偏振度为光的线性偏振度为〜(50-60):1的偏振光的设备,包括脉冲或永久性非偏振光的光源(1),例如以基于LED的商用LED的形式蓝绿色,蓝色或紫外线范围内的III族氮化物(发射波长在380-550 nm范围内),以及外部偏振元件(2),以GaAs衬底(3)的形式制成,取向为(001),在其上有一层厚度约为150-250 nm的层,由二维GaSe晶体纳米板(4)沿选定的方向定向<111> GaAs衬底组成。当通过外延生长中取向为(001)的GaAs衬底(3)上的分子束外延生长GaSe层时,自发形成GaSe定向纳米板(4)阵列形式的外部偏振元件(2)。温度范围T S = 500–520°C .;效果:设备尺寸小,主要由非偏振光源的尺寸决定,将非偏振辐射转换为偏振的效率很高(高达90%强度)和高度线性偏振光(50:1和更高).; 6 cl,4 dwg

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