Method for separating a semiconductor component with a pn junction and semiconductor component with a pn junction

摘要

The invention relates to a semiconductor component (1a, 1b, 1c, 1d, 1e) with at least one emitter (2a, 2b, 2c), at least one base (3a, 3b, 3c, 3d, 3e), with a base (3a , 3b, 3c, 3d, 3e) a pn junction (4a, 4b, 4c) is formed, with at least one non-metallic cross-conductor layer for cross-conducting majority charge carriers of the emitter, the emitter (2a, 2b, 2c) comprising the cross-conductor layer and / or the transverse line layer is formed parallel to the emitter (2a, 2b, 2c) and connected to it in an electrically conductive manner, and with a break side on which the semiconductor component (1a, 1b, 1c, 1d, 1e) has been separated. It is essential that a cross-line avoidance area (5a, 5b, 5c, 5d, 5e) is designed and arranged on the fracture side in such a way that the cross-conductivity capability is reduced by at least a factor of 10, the cross-line avoidance area (5a, 5b, 5c, 5d, 5e ) perpendicular to the fracture side has a depth (TQ) in the range 5 µm to 500 µm, in particular 10 µm to 200 µm. The invention further relates to a method for separating a semiconductor component.