首页> 外国专利> MAINTAINING A CERCITIVE FIELD AFTER HIGH TEMPERATURE TEMPERATURES FOR MAGNETIC DEVICE APPLICATIONS WITH VERTICAL MAGNETIC ANISOTROPY

MAINTAINING A CERCITIVE FIELD AFTER HIGH TEMPERATURE TEMPERATURES FOR MAGNETIC DEVICE APPLICATIONS WITH VERTICAL MAGNETIC ANISOTROPY

机译:在具有垂直磁各向异性的磁性设备应用中,在高温后保持矫正场

摘要

A magnetic tunnel contact with perpendicular magnetic anisotropy (PMA MTJ) is disclosed, a free layer (14) having an interface (20) with a tunnel barrier layer (13) and a second interface (21) with an oxide layer (15). A lattice tuning layer (16-1) adjoins an opposite side of the oxide layer with respect to the free layer and consists of CoFeNiLM or CoFeNiL, where L is one of B, Zr, Nb, Hf, Mo, Cu, Cr, Mg, Ta, Ti , Au, Ag or P and M is one of Mo, Mg, Ta, Cr, W or V, (x + y + z + w + v) = 100 atom%, x + y o and each of v and w o is. The lattice tuning layer grows a BCC structure during annealing at about 400 ° C, thereby promoting BCC structure growth in the oxide layer. As a result, PMA of the free layer is strengthened and maintained to give improved thermal stability.
机译:公开了具有垂直磁各向异性的磁隧道接触(PMA MTJ),自由层(14)具有与隧道势垒层(13)的界面(20)和与氧化物层(15)的第二界面(21)。相对于自由层,晶格调谐层(16-1)邻接氧化物层的相对侧并且由CoFeNiLM或CoFeNiL组成,其中L是B,Zr,Nb,Hf,Mo,Cu,Cr,Mg之一,Ta,Ti,Au,Ag或P,M是Mo,Mg,Ta,Cr,W或V中的一种,(x + y + z + w + v)= 100原子%,x + y> o v和w> o是。晶格调谐层在约400℃的退火期间生长BCC结构,从而促进氧化物层中的BCC结构生长。结果,自由层的PMA被增强并保持以提供改善的热稳定性。

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