STORAGE DEVICE WITH SELECTIVE PRECHARGE

摘要

A memory device has memory cells that are functionally connected to column signal lines and word signal lines. The column signal lines associated with one or more memory cells to be accessed (e.g., to be read) are precharged to a first voltage level. The column signal lines that are not associated with the one or more memory cells to be accessed are precharged to a second voltage level, the second voltage level being lower than the first voltage level.