首页> 外国专利> PROCESS FOR CHEMICAL-MECHANICAL POLISHING OF COBALT WITH HIGH COBALT REMOVAL SPEEDS AND REDUCED COBALT CORROSION

PROCESS FOR CHEMICAL-MECHANICAL POLISHING OF COBALT WITH HIGH COBALT REMOVAL SPEEDS AND REDUCED COBALT CORROSION

机译:高去除钴速度和降低钴腐蚀的钴化学机械抛光工艺

摘要

A method of chemical mechanical polishing of cobalt to planarize the surface and remove at least a portion of the cobalt from a substrate. The method includes providing a polishing composition containing as original components: water; an oxidizing agent; colloidal silica abrasive particle; Aspartic acid or salts thereof; a phosphonic acid having an alkyl group having more than ten carbon atoms, the phosphonic acid having the alkyl group having more than ten carbon atoms included in amounts sufficient to provide high cobalt removal rates of ≥ 2000 Å / min and substantial cobalt corrosion inhibition will; and providing a chemical mechanical polishing pad having a polishing surface; Creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the polishing composition to the polishing surface at or near the interface between the polishing pad and the substrate; whereby a part of the cobalt is polished away and cobalt corrosion is substantially inhibited.
机译:一种对钴进行化学机械抛光以使表面平坦化并从基底去除至少一部分钴的方法。该方法包括提供一种抛光组合物,该抛光组合物包含以下成分:水;水;和水。氧化剂;胶体二氧化硅磨料颗粒;天冬氨酸或其盐;具有至少十个碳原子的烷基的膦酸,其中所包含的具有十个碳原子以上的烷基的膦酸的量应足以提供≥2000Å/ min的高钴去除速率并具有显着的钴腐蚀抑制作用;提供具有抛光表面的化学机械抛光垫;在抛光垫和基底之间的界面处产生动态接触;在抛光垫和基底之间的界面处或附近将抛光组合物分配到抛光表面上;从而将钴的一部分抛光掉,并基本上抑制了钴的腐蚀。

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