METHOD FOR DETERMINING THE DYNAMICS OF CHARGE CARRIERS IN A SEMICONDUCTOR MATERIAL AND ASSOCIATED DEVICE

摘要

One aspect of the invention relates to a method for determining the dynamics of charge carriers in a semiconductor material comprising a first step of determining a model accounting for the normalized surface potential in the semiconductor material subjected to a light beam modulated as a function of at least one growth time constant and at least one decay time constant; for a plurality of sets of time constants, a second step of calculating, from the determined model and for a plurality of modulation frequencies of a light beam, of the normalized value of the surface potential as a function of time so obtaining the saturation of the value of the normalized surface potential as a function of time; for the plurality of sets of time constants, a third step of determining, for each modulation frequency of a light beam, the average normalized surface potential over the period following saturation; and a fourth step of adjusting the average normalized surface potential obtained for each of the modulation conditions of a light beam to experimental data so as to determine at least one growth time constant and at least one time constant of growth. decrease.