SUBSTRAT DE RÉGÉNÉRATION EN CARBURE DE SILICIUM ET PROCÉDÉ DE FABRICATION D'UN DISPOSITIF À SEMI-CONDUCTEURS AU CARBURE DE SILICIUM

摘要

This silicon carbide regeneration substrate includes a silicon carbide substrate and a first silicon carbide layer. The silicon carbide substrate has a first main surface and a second main surface opposite the first main surface. The first silicon carbide layer is in contact with the first main surface. The silicon carbide substrate includes a substrate region that is within 10 μm from the first main surface toward the second main surface. In a direction perpendicular to the first main surface, a value obtained by subtracting a value that is three times the standard deviation of the nitrogen concentration of the substrate region from the average value of the nitrogen concentration of the substrate region is greater than the minimum value of the nitrogen concentration of the first silicon carbide layer.