PROCÉDÉ D'ÉVALUATION DE MONOCRISTAUX DE CARBURE DE SILICIUM (SIC) EN VRAC ET MONOCRISTAL DE CARBURE DE SILICIUM DE RÉFÉRENCE UTILISÉ DANS LEDIT PROCÉDÉ

摘要

Provided are a method by which the degrees of the strains of lattices in a plurality of bulk SiC single crystals can be relatively evaluated, and a reference SiC single crystal to be used in the method. Specifically provided are an evaluation method for bulk-shaped silicon carbide single crystals, including: measuring a Raman shift R ref of a reference silicon carbide single crystal to be used as a standard; measuring respective Raman shifts R n of a plurality of bulk-shaped silicon carbide single crystals serving as objects to be evaluated; determining differences between each of the Raman shifts R n and the Raman shift R ref ; and relatively comparing the differences, to thereby relatively evaluate magnitudes of strains of lattices in the plurality of bulk-shaped silicon carbide single crystals serving as objects to be evaluated, and a reference silicon carbide single crystal to be used in the method, having a size of 5 mm square or more and 50 mm square or less and a thickness of 100 µm or more and 2, 000 µm or less, having a surface roughness Ra of 1 nm or less, and having a micropipe density of 1.0/cm 2 or less and a dislocation density of 5×10 3 /cm 2 or less.