MANUFACTURING METHOD FOR SiC MOSFET WITH UNIFORM THICKNESS GATE OXIDE BY SURFACE MODIFITAION AND SiC MOSFET MANUFACTURED USING THE SAME

摘要

The present invention relates to a manufacturing process capable of forming a gate oxide film having a uniform thickness when manufacturing a trench MOSFET. More specifically, the present invention, in the method of manufacturing a trench structure MOSFET, forming a substrate (substrate), forming a drift layer on the substrate, forming a trench in the substrate and the drift layer (trench) And a step of selectively surface-modifying only the formed trench wall, and performing gate oxidation.