III nitride structures with regions of successive crystal dislocation density

摘要

The structure comprises a nucleation layer and a group III nitride structure disposed on the surface of the nucleation layer, and the group III nitride structure has a layer of laminated group III nitride of multiple pairs, each pair of layers of a plurality of layers has a lower layer having a 3D growth structure and an upper layer having a 2D growth structure.Each of the lower layers has a surface roughness greater than the surface roughness at the completion of the pair at the time of completion.An interface between each of the upper layer and the lower layer of a layer of stacked group III nitride of a plurality of pairs has the coupling and \/ or annihilation of the crystalline dislocation therein.