Group III-nitride structures with successively reduced crystallographic dislocation density regions

摘要

A nucleation layer; And a group III-nitride structure disposed on the surface of the nucleation layer, wherein the group III-nitride structure comprises a plurality of pairs of stacked Group III-nitride layers, each of the plurality of pairs. Has a lower layer having a 3D growth structure, and each of the upper layers of the plurality of pairs has a 2D growth structure. Each of the bottom layers upon completion has a surface roughness that is greater than the surface roughness upon completion of the top layer of the pair of layers. The interface between each of the upper and lower layers of the plurality of pairs of stacked Group III-nitride layers has crystallographic potential combination and / or dissipation therein.