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Group iii-nitride structure having successively reduced crystallographic dislocation density regions
Group iii-nitride structure having successively reduced crystallographic dislocation density regions
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机译:晶体位错密度区域连续减小的Ⅲ族氮化物结构
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摘要
A structure having: a nucleation layer; and a Group III-Nitride structure disposed on a surface of the nucleation layer, the Group III-Nitride structure comprising a plurality of pairs of stacked Group III-Nitride layers, each one of the pairs of layers having a lower layer having a 3D growth structure and each one of the upper one of the pairs of layers having a 2D growth structure. Each one of the lower layers at completion has a surface roughness greater than a surface roughness at completion of an upper one of the pair of layers. Interfaces between each one of the upper layers and each one of the lower layers of the plurality of pairs of stacked Group III-Nitride layers have crystallographic dislocation combinations and/or annihilations therein.
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