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VERFAHREN ZUR IMPLEMENTIERUNG EINES FERROELEKTRISCHEN TUNNELÜBERGANGS, VORRICHTUNG MIT EINEM FERROELEKTRISCHEN TUNNELÜBERGANG UND VERWENDUNG EINER SOLCHEN VORRICHTUNG
VERFAHREN ZUR IMPLEMENTIERUNG EINES FERROELEKTRISCHEN TUNNELÜBERGANGS, VORRICHTUNG MIT EINEM FERROELEKTRISCHEN TUNNELÜBERGANG UND VERWENDUNG EINER SOLCHEN VORRICHTUNG
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摘要
The invention relates to a method of implementing a ferroelectric tunnel junction, said junction comprising to films each forming an electrode-type conductive element, and separated by a film forming a ferroelectric element acting as the tunnel barrier, said ferroelectric element being able to possess a remanent polarization. According to the invention, the ferroelectric element possesses a domain structure, said domains corresponding to regions of the ferroelectric element the polarization of which is oriented one way in a single direction; and when a voltage is applied between the electrodes, the absolute value of the voltage being equal to or higher than the absolute value of what is called a saturation voltage, the ferroelectric element main comprises only a single domain; and when a voltage is applied between the electrodes, the absolute value of the voltage being lower than the absolute value of what is called the saturation voltage, the ferroelectric element comprises a plurality of separate domains, the spatial distribution of said domains and their proportions being controlled by the chosen voltage value.
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