The invention relates to a method for determining the concentrations of majority and minority doping impurities in a sample of semiconducting material compensated with doping impurities. This method comprises the following steps: measuring electrical resistivity values (pM, pB) of the sample at a first temperature (TM) and at a second temperature (TB), distinct from the first temperature, the first and second temperatures (TM, TB) belonging to a temperature range (P3) corresponding to a charge carrier freezing regime; determining a pre-exponential factor of an Arrhenius law expressing the electrical resistivity in the charge carrier gel regime, from the electrical resistivity values (pM, pB) measured at the first and second temperatures (TM, TB ); determining a degree of compensation of the semiconductor material from the pre-exponential factor; determining the majority and minority doping impurity concentrations from the degree of compensation and from a reference value of the electrical resistivity of the sample.
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