Characterization of Majority and Minority Carrier Transport in Heavily Doped Silicon

摘要

Majority carrier transport in bulk heavily doped silicon is characterized by means of conductivity and Hall coefficient measurements as a function of temperature from 80 to 370 deg K. The equilibrium majority bulk carrier density and Hall mobility and their dependence on temperature are extracted. Majority carrier transport at ohmic metal-semiconductor interfaces is characterized by measuring specific contact resistivity as a function of doping density and temperature using planar test structures. The results are compared to existing theory. Minority carrier transport in bulk heavily doped silicon is characterized by measuring three parameters - lifetime, mobility, and carrier density. Bulk minority carrier lifetime is measured using an all-optical photoluminescence technique. Bulk minority carrier mobility and equilibrium minority carrier density (or equivalently, band-gap narrowing) are measured using bipolar transistor test structures with uniformly heavily doped base regions. The temperature dependence of mobility and band-gap narrowing is measured. Minority carrier transport at insulating interfaces is characterized by measuring surface recombination. The fundamental surface recombination velocity of the Si:P/SiO sub 2 interface is characterized as a function of doping density with electrical measurements of gated-base vertical transistors. (ERA citation 13:015369)