首页> 外国专利> SYSTÈME ET PROCÉDÉ DE DÉTECTION D'HUMIDITÉ DESTINÉS À ÊTRE UTILISÉS DANS UN TRANSISTOR IGBT OU DANS UN TRANSISTOR MOSFET

SYSTÈME ET PROCÉDÉ DE DÉTECTION D'HUMIDITÉ DESTINÉS À ÊTRE UTILISÉS DANS UN TRANSISTOR IGBT OU DANS UN TRANSISTOR MOSFET

摘要

A moisture detecting system has a power semiconductor module having a gate driver with the gate in which the gate driver has an on condition and an off condition, a power supply connected to the gate driver so as to supply voltage to the gate driver, a controller cooperative between the power supply and the gate driver so as to set the gate driver between the on condition and the off condition, and a sensor connected to the gate driver so as to detect a leakage of current across the gate driver. The controller is cooperative at the power supply so as to turn off the power supply when the signal is indicative of the leakage of current. The gate driver can an IGBT or a MOSFET.

著录项

  • 公开/公告号EP3542430A4

    专利类型

  • 公开/公告日2020.07.08

    原文格式PDF

  • 申请/专利权人 Williams, Kevin, R.;

    申请/专利号EP17890335

  • 发明设计人 Williams, Kevin, R.;

    申请日2017.11.30

  • 分类号

  • 国家 EP

  • 入库时间 2022-08-21 10:53:56

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