CIRCUIT D'ÉCRITURE SUR ET DE LECTURE À PARTIR D'UN RÉSEAU DE CELLULES DE MÉMOIRE RÉSISTIVE À ACCÈS ALÉATOIRE

摘要

Numerous embodiments of methods for writing to a resistive random access memory (RRAM) cell are disclosed. In one embodiment, the system verifies if a current through the RRAM cell exceeds a threshold value, and if it does not, the system executes a concurrent write-while-verify operation. In another embodiment, the system verifies if current through the RRAM cell has reached a target value, and if it has not, the system executes a write operation and then verifies the write operation using a current comparison.