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One-dimensional photonic crystal / photonic wire cavities based on silicon-on-insulator (SOI)

机译:基于绝缘体上硅(sOI)的一维光子晶体/光子线腔

摘要

It has been of major interest in recent research to produce faster optical processing for many telecommunications applications, as well as other applications of high performance optoelectronics. The combination of one-dimensional photonic crystal structures (PhC) and narrow photonic wire (PhW) waveguides in high refractive-index contrast materials such as silicon-on-insulator (SOI) is one of the main contenders for provision of various compact devices on a single chip. This development is due to the ability of silicon technology to support monolithic integration of optical interconnects and form fully functional photonic devices incorporated into CMOS chips. The high index contrast of the combination of a silicon core with a surrounding cladding of silica and/or air provides strong optical confinement, leading to the realization of more compact structures and small device volumes. In order to obtain a wide range of device functionality, the reduction of propagation losses in narrow wires is equally important, although there are still performance limitations determined by fabrication processes. Compact single-row PhC structures embedded in PhW waveguide micro-cavities could become essential components for wavelength selective devices, especially for possible application in WDM systems. The high quality factor, Q, and confinement of light in a small volume, V, are important for optical signal processing and filtering purposes, implying large Purcell factor values. In this thesis, one-dimensional photonic crystal/photonic wire micro-cavities have been designed and modeled using both 2D and 3D versions of the finite-difference time-domain (FDTD) approach. These devices were fabricated using electron beam lithography (EBL) and reactive ion etching (RIE) for patterning of the silicon layer. The device structures were characterized with TE polarized light, using a tunable laser covering the range from 1480 nm to 1585 nm. Single-row periodic hole-type PhC mirrors consisting of identical and equally spaced holes were embedded in 500 nm wire waveguides. Two PhC hole mirrors were separated with a cavity spacer varying from 400 nm to 500 nm in length to form a micro-cavity. In contrast, several different cavity arrangements were also successfully investigated, - i.e. extended cavity and coupled micro-cavity structures. The experimental results on photonic crystal/photonic wire micro-cavity structures have demonstrated that further enhancement of the quality-factor (Q-factor) - up to approximately 149,000 at wavelengths in the fibre telecommunications range is possible. The Q factor values and the useful transmission levels achieved are due, in particular, to the combination of both tapering within and outside the micro-cavity, with carefully designed hole diameters and non-periodic hole placement within the tapered sections. On the other hand, a large resonance quality factor of approximately 18,500, together with high normalized transmission of 85% through the use of tapering on both sides of the hole-type PhC mirrors that formed the micro-cavity, has been obtained. For the extended cavity case, the multiple resonances excited within the stop band, together with substantial tuning capability of the resonances obtained by varying the cavity length has been demonstrated, together with a Q-factor value of approximately 74,000 at the selected resonance frequency with a normalised transmission of 40%. In addition, the coupled micro-cavity structures considered in this thesis have formed the basic building block for designing multiple cavity structures where the combination of several cavities splits the selected single cavity resonance frequency into a number of resonances that depends directly on the number of cavities used in the design. The coupling strength between the resonators and the Free Spectral Range (FSR) between the split resonance frequencies of the coupled cavity combination were controlled via the use of different numbers of periodic hole structures – and through the use of different aperiodic hole taper arrangements between the two cavities in the middle section of the mirrors.
机译:为许多电信应用以及高性能光电的其他应用产生更快的光学处理在最近的研究中引起了人们的极大兴趣。一维光子晶体结构(PhC)和窄光子线(PhW)波导在高折射率对比材料(例如绝缘体上硅(SOI))中的组合是在其上提供各种紧凑型器件的主要竞争者之一一个芯片。这种发展是由于硅技术能够支持光学互连的单片集成并形成并入CMOS芯片的功能齐全的光子器件。硅芯与周围的二氧化硅和/或空气的包层相结合的高折射率对比度提供了强大的光学限制,从而实现了更紧凑的结构和更小的器件体积。为了获得广泛的设备功能,减少窄导线中的传播损耗同样重要,尽管仍然存在制造工艺决定的性能限制。嵌入在PhW波导微腔中的紧凑型单行PhC结构可能成为波长选择设备的必要组件,尤其是对于WDM系统中的可能应用。高质量因数Q和光在小体积内的约束V对光信号处理和滤波目的很重要,这意味着较大的赛尔因数值。本文利用有限差分时域(FDTD)方法的2D和3D版本设计和建模了一维光子晶体/光子线微腔。这些设备是使用电子束光刻(EBL)和反应离子刻蚀(RIE)制造的,用于对硅层进行构图。器件结构采用TE偏振光进行表征,并使用可覆盖1480 nm至1585 nm范围的可调激光器。将由相同且等距间隔的孔组成的单行周期孔型PhC反射镜嵌入500 nm线波导中。用长度从400 nm到500 nm的腔间隔器分隔两个PhC孔镜,以形成微腔。相反,还成功地研究了几种不同的腔布置,即扩展腔和耦合的微腔结构。在光子晶体/光子线微腔结构上的实验结果表明,进一步提高质量因数(Q因数)是可能的,在光纤通信范围内的波长处,最高可达约149,000。 Q因子值和达到的有用透射率水平尤其是由于微腔内部和外部的锥度,精心设计的孔径和锥形部分内非周期性孔的组合所致。另一方面,通过在形成微腔的孔型PhC镜的两侧上使用锥形,已经获得了大约18,500的大共振品质因数以及85%的高归一化透射率。对于扩展腔的情况,已经证明了在阻带内激发的多个共振,以及通过改变腔长度获得的共振的基本调谐能力,以及在选定的共振频率下具有约74,000的Q因子值,以及标准化传输率为40%。此外,本文中考虑的耦合微腔结构已经形成了设计多个腔体结构的基本构件,其中多个腔体的组合将选定的单个腔体共振频率分解为多个共振,这些共振直接取决于腔体的数量在设计中使用。谐振器之间的耦合强度和耦合腔组合的分裂谐振频率之间的自由光谱范围(FSR)通过使用不同数量的周期性孔结构–以及通过在两者之间使用不同的非周期性孔锥度排列来控制镜子中间部分的空腔。

著录项

  • 作者

    Md Zain Ahmad Rifqi;

  • 作者单位
  • 年度 2009
  • 总页数
  • 原文格式 PDF
  • 正文语种 English
  • 中图分类
  • 入库时间 2022-08-20 21:06:20

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