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In-band pumping of expitaxially grown $Er:(Gd, Lu)_2O_3$ waveguides for active integrated optical devices

机译:用于有源集成光学器件的外延生长$ Er:(Gd,Lu)_2O_3 $波导的带内泵浦

摘要

Monocrystalline lattice matched Er(0.6%):(Gd, Lu)2O3 films with thicknesses up to 3 m and nearly atomically flat surfaces have been deposited on Y2O3 substrates by Pulsed Laser Deposition (PLD). The epitaxial growth has been verified in-situ by Reflection High Energy Electron Diffraction (RHEED). As first test structures channel waveguides with widths ranging from 2 to 5 m and heights from 400 to 700 nm have been fabricated by Reactive Ion Etching and finally covered by about 1.5 m thick a-Al2O3 top claddings to reduce scattering losses at the surface. Due to the refractive index difference between film and substrate (0.03 at 1.55 m) rib waveguiding could be demonstrated. The fluorescence spectra of the films are comparable with those of Er:Y2O3 bulk crystals. Therefore, a theoretical gain spectrum could be calculated from the absorption and emission spectra of Er:Y2O3. Bleaching at the pump wavelength of 1480 nm results in an inversion ratio 0.75 between the 4I13/2 and 4I15/2 multiplet of Er3+ and thus to a theoretical gain of 260% at 1535 nm for a 7 mm long waveguide.Gain measurements using a tunable diode laser (1530 nm to 1583 nm) as signal and a pump diode at 1480 nm have been performed. Both sources have been combined in a single mode fiber and then coupled into the waveguide. Using the lock-in technique and a monochromator, the signal intensity I of the outcoupled light could be measured in dependance of the pump power (up to 100 mW before coupling into the waveguide) and the gain determined as (Ipumped – Iunpumped) / Iunpumped. Calculations show that the small waveguide dimensions allow bleaching with absorbed powers well below 1 mW. It has been experimentally verified that the incident signal of 0.5 mW was sufficient to already bleach the waveguide in the unpumped case. Therefore, the reduction of signal absorption in the pumped case can be neglected and does not falsify our measured gain. At 1535 nm a maximum gain of 150% (4 dB) could be measured for the 7 mm long sample, resulting in a gain of 5.7 dB/cm. The measured gain is lower than the theoretically expected, because the intensity distribution of the guided mode is not limited to the doped regions. Taking this into account by normalizing the theoretical gain spectrum to the maximum measured gain of 150% results in a good accordance of the experimentally determined gain at various wavelengths with the theoretical spectrum (see Fig. 1c). The high gain obtainable due to bleaching in the small waveguiding structures combined with the relative high peak cross sections of crystalline RE doped (Gd, Lu)2O3 makes these waveguides promising for the development of compact lasers with low lasing threshold and high frequency stability.
机译:通过脉冲激光沉积(PLD)在Y2O3衬底上沉积了厚度达3μm且几乎原子平面的单晶晶格匹配Er(0.6%):( Gd,Lu)2O3薄膜。外延生长已通过反射高能电子衍射(RHEED)原位验证。作为第一个测试结构,通过反应离子刻蚀制造了宽度范围从2到5m,高度从400到700 nm的通道波导,最后覆盖了约1.5 um厚的a-Al2O3顶部包层,以减少表面的散射损耗。由于薄膜和基板之间的折射率差异(在1.55m处为0.03),可以证明肋波导。薄膜的荧光光谱与Er:Y2O3块状晶体的荧光光谱相当。因此,可以从Er:Y2O3的吸收和发射光谱计算理论增益谱。在1480 nm的泵浦波长处发生漂白会导致Er3 +的4I13 / 2和4I15 / 2多重峰之间的反转比为0.75,因此对于7 mm长的波导在1535 nm处理论增益为260%。二极管激光器(1530 nm至1583 nm)作为信号以及在1480 nm处的泵浦二极管已经完成。两种光源都已合并在单模光纤中,然后耦合到波导中。使用锁定技术和单色仪,可以根据泵浦功率(耦合到波导之前高达100 mW)测量出耦合光的信号强度I,并将增益确定为(Ipumped – Iunpumped)/ Iunpumped 。计算表明,较小的波导尺寸允许漂白,吸收功率远低于1 mW。实验已经证明,在无泵浦情况下,0.5 mW的入射信号足以使波导漂白。因此,可以忽略泵浦情况下信号吸收的降低,并且不会伪造我们的测量增益。在1535 nm处,对于7毫米长的样品,可以测量到150%(4 dB)的最大增益,从而获得5.7 dB / cm的增益。测得的增益低于理论上的预期值,因为引导模式的强度分布不限于掺杂区域。通过将理论增益谱归一化至最大测量增益150%考虑到这一点,可以很好地根据实验确定的各种波长下的理论谱增益(见图1c)。由于在小波导结构中的漂白以及掺入结晶稀土的(Gd,Lu)2O3的相对较高的峰截面而获得的高增益,使这些波导有望用于开发具有低激射阈值和高频稳定性的紧凑型激光器。

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